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Condensed Matter & Materials Physics

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Simulations of Materials & Defects Group

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Affiliated with Thomas Young Centre - the London Centre for the Theory and Simulation of Materials.

News and Research Highlights

Steven Hepplestone wins the European Materials Research Society meeting Oral Presentation Prize for his talk First principles calculations of the role of metal interstitials at the interface between Mo and GaAs in Symposium J: Semiconductor Nanostructures towards Electronic and Optoelectronic Device Applications. May 2013.

Congratulations!

Do research this summer: information about summer research opportunities in the area of Condensed Matter and Materials Physics for undergraduate students is available here.

fig_13_AdvMat_CrSTO_1
Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping Heteroepitaxial growth of Cr metal on Nb-doped SrTiO3(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, The contact resistance of the resulting interface is exceedingly low. More...

fig_13_AFM_LCO_defects_1
The impacts of cation stoichiometry and substrate surface quality on nucleation, structure, defect formation, and intermixing in complex oxide heteroepitaxy-LaCrO3 on SrTiO3(001). The ability to fabricate electronic devices based on complex oxides critically depends on the ability to controllably synthesize thin films of these materials. We report the effect of cation stoichiometry on structural quality and defect formation in LaCrO3 heteroepitaxial films and show that cation mixing occurs at the interface for all La-to-Cr ratios investigated. More...

Dr. Peter V. Sushko, MInstP
Royal Society University Research Fellow, Reader in Physics
Departments of Physics & Astronomy
(Condensed Matter and Materials Physics) and
London Centre for Nanotechnology
University College London
Gower St., London, WC1E 6BT, UK
Tel.: +44-(0)20-7679-9936 (ext. 39936)
Fax: +44-(0)20-7679-7145
E-mail: p.sushko [*] ucl.ac.uk

royal_society

Bio. I obtained my BSc (1994) and MSc (1996) degrees from St. Petersburg State University and PhD in Physics (2000) from the University of London. Following this, I worked as a post-doctoral researcher at University College London and was appointed an Associate Professor at Tohoku University in Japan in 2008.

I have been a Royal Society University Research Fellow at University College London since 2008. My research interests are in the area of computational modelling of materials with an emphasis on defects in oxides and oxide interfaces.