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Prof Tony Kenyon
Professor of Nanoelectronic & Nanophotonic Materials
Dept of Electronic & Electrical Eng
Faculty of Engineering Science
- Joined UCL
- 1st Mar 1992
Research summary
My group's research interests focus mainly on nanostructured materials and devices and their applications in electronics and photonics. We are particularly interested in:
Memristive devices and systems
Neuromorphic (brain-inspired) devices and systems
Resistance switching in silicon oxides
Light-triggered resistance switching
Silicon photonics
Light emission from silicon nanostructures
Quantum confinement effects
Self-assembled nanostructures
Teaching summary
I teach the Nanotechnology MSc Module Photonics in Nanosystems
I am also a second year undergraduate tutor.
Education
- University of Sussex
- , | 1992
- University of Sussex
- , | 1986
Biography
I am Professor of nanoelectronic & Nanophotonic Materials, and Vice Dean (Research), heading the Nanoelectronic & Nanophotonic Materials group. My group’s work focuses on the application of nanostructured materials to nanoelectronics and photonics. I am particularly interested in resistance switching devices (memristors) based on oxides (mainly silicon oxides, but other CMOS-compatible oxides as well), and how they can be used in novel non-volatile memories, hardware acceleration for Machine Learning, and neuromorphic devices and systems. My work on resistance switching earned me a nomination for a personal World Technology Network Award , a “one to watch” UCL business award , and I have set up a company to commercialise this technology – Intrinsic Semiconductor Technologies (www.intrinsicst.com)/).
In the past 8 years my group has pioneered memristance in silicon oxide, achieving several world firsts, including: conclusive demonstration of oxygen emission from electrically-stressed silicon oxide; the first 3D tomograph of oxygen vacancy conductive filaments; demonstrating neural behaviour in memristors; demonstrating Spike Timing Dependent Plasticity in unipolar memristors; optical triggering of memristors by carrier injection.