Below are a list of publications with links to the Journal page and also to Open Access versions in the UCL Discovery repository.
Schofield home ◊ People ◊ Research ◊ Publications ◊ Join us
The publications below can also be found in the UCL Discovery open access repository.
2019 | |
Dissociation of CH3−O as a Driving Force for Methoxyacetophenone Adsorption on Si(001). | |
2018 | |
Two- to three-dimensional crossover in a dense electron liquid in silicon. | |
Higher order reconstructions of the Ge(001) surface induced by a Ba layer. | |
2017 |
|
Nondestructive imaging of atomically thin nanostructures buried in silicon. | |
Exact location of dopants below the Si(001): H surface from scanning tunneling microscopy and density functional theory. | |
2016 | |
Adsorption and Dissociation of a Bicyclic Tertiary Diamine, Triethylenediamine, on a Si(100)-2 x 1 Surface. Zhao, J; Madachik, MR; O'Donnell, KM; Moore, G; Thomsen, L; Warschkow, O; Schofield, SR. Published article: Journal of Physical Chemistry C , 120, 28672 (2016) Open access preprint: [Download Open Access Version from UCL Repository] | |
Orientation and stability of a bi-functional aromatic organic molecular adsorbate on silicon. | |
STM and DFT study on formation and characterization of Ba-incorporated phases on a Ge(001) surface. | |
Reaction paths of phosphine dissociation on silicon (001) Warschkow, O; Curson, NJ; Schofield, SR; Marks, NA; Wilson, HF; Radny, MW; Smith, PV; Reusch, TC; McKenzie, DR; Simmons, MY. Journal of Chemical Physics, 144, 014705 (2016) [Download Open Access Version from UCL Repository] | |
2015 | |
Initial growth of Ba on Ge(001): An STM and DFT study. | |
Single dopants in semiconductors [Editorial]. | |
Ba termination of Ge(001) studied with STM. | |
Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001). O'Donnell, KM; Warschkow, O; Suleman, A; Fahy, A; Thomsen, L; Schofield, SR. Journal of Physics: Condensed Matter, 27, 054002 (2015) [Download Open Access Version from UCL Repository] | |
2014 | |
Imaging of buried phosphorus nanostructures in silicon using scanning tunneling microscopy. | |
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy. Sinthiptharakoon, K; Schofield, SR; Studer, P; Brazdova, V; Hirjibehedin, CF; Bowler, DR; Curson, NJ. Journal of Physics: Condensed Matter, 26, 012001 (2014) [Download Open Access Version from UCL Repository] | |
2013 | |
Magnetic anisotropy of single Mn acceptors in GaAs in an external magnetic field. | |
Quantum engineering at the silicon surface using dangling bonds. Schofield, SR; Studer, P; Hirjibehedin, CF; Curson, NJ; Aeppli, G; Bowler, DR. Nature Communications, 4, 1649 (2013) [Download Open Access Version from UCL Repository] | |
Phenyl Attachment to Si(001) via STM Manipulation of Acetophenone. Schofield, SR; Warschkow, O; Belcher, DR; Rahnejat, KA; Radny, MW; Smith, PV. Journal of Physical Chemistry C, 117, 5736 (2013) | |
Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy. Studer, P; Schofield, SR; Hirjibehedin, CF; Curson, NJ. Applied Physics Letters, 102, 012107 (2013) | |
2012 | |
Site-Dependent Ambipolar Charge States Induced by Group V Atoms in a Silicon Surface. Studer, P; Brazdova, V; Schofield, SR; Bowler, DR; Hirjibehedin, CF; Curson, NJ. ACS Nano, 6, 10456 (2012) | |
Guided Self-Assembly of Metal Atoms on Silicon Using Organic-Molecule Templating. Belcher, DR; Radny, MW; Schofield, SR; Smith, PV; Warschkow, O. Journal of the American Chemical Society, 134, 15312 (2012) |