_____________________________________________________________________
Other M2O3
A. Corundum structure:
Ti2O3 Paramagnetic semiconductor
|
|
// |
^ |
|
e o |
44.1 |
45.8 |
|
e ¥ |
27.7 |
31.2 |
Phonons: Phys. Rev. B16, 4718 (1977)
Stress on resistivity: Phys. Rev. B16, 4413 (1977)
Elastic constants and pressure dependence: Phys. Rev. B18, 6807 (1978)
V2O3 Antiferromagnetic, metal/semiconductor
Elastic constants: Phys. Stat. Sol. 16, 656 (1974)
a
-Ga2O3
Rh2O3
Cr2O3 See precedent document
B. "A" RE sesquioxides:
La2O3
e
o = 20.8 (Samsonov)
Ce2O3
e
o = 21.2 (samsonov)
Pr2O3
Nd2O3
e
o = 19.7 (Samsonov)
Eu2O3 B type, T> 1050K, anisotrope monoclinic
C type (bcc), can be stabilised with MoO3
Young’s modulus and thermal conductivity, specific heat:
K.E. Gilchrist, R.G. Preston, Physical properties of Europium sesquioxide
J.Nucl.Nat. 68, 39 (1977)
C. "C" RE sesquioxides:
a
-Mn2O3
Sc2O3
Elastic constants: J. Am. Ceram. Soc. 60, 167 (1977)
Y2O3
MP: 2410 ° C
E. gap: 6.0 eV (exciton) (Ref.: Sov. Phys. Sol. St. 20, 399)
e
o = 12
In2O3
Tl2O3
Sn2O3
e
o = 21.5 (Samsonov)
Energy losses in M2O3:
J. Frandon et al., Phys.Stat.Sol. 98, 379 (1980), which gives:
Sc2O3 Y2O3 Zr2O3 HfO2
Gap (eV) 4.5 5.5
Plasmon 13.5 15 14.8 15.7
energy
Other data:
V.M. Koleshko and N.V. Babuskkina, Thin Solid Films 62, 1 (1979), which gives
e o for various oxides from thin films (~1.3-1.2 m m.), data at 1mhz
|
|
X2O3 |
XO2 |
|
Y |
7.6-9.4 |
Ce 16-20 |
|
Eu |
13-17 |
|
|
Gd |
9-11.3 |
|
|
Dy |
11-13.5 |
|
|
Ho |
10.8-9.4 |
|
|
Er |
8-9.8 |
|
|
Tn |
11-13.8 |
|
|
Yb |
9.7-12 |
|
Also:
Elastic properties of polycrystalline Scandium and Thulium sesquioxides. S.L. Dole, O Hunter, F.W. Calderwood, J. Am. Ceram.S oc. 60, 167 (1977) which gives:
|
|
Sc2O3 |
Tm2O3 |
|
|
Young’s modulus |
2.2762 |
1.7925 |
10exp(12) dyne/cm2 |
|
Shear modulus |
0.9052 |
0.6939 |
|
_____________________________________________________________________