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Fe₂O₃ (semiconductor)

Number of sites: 4*10exp(22) Fe sites/cm3

Elastic constants: Voigt 1928

High pressure: spin phase change

Akimoto, Adv. Earth Planet Sci. 12, 81 (1982)

Phonons from IR: Phys. Rev. B16, 1717 (1977)

Dielectric constants:

e o in range: 12.8 to 15.2; e (¥ ) = 2.9*2.9 = 8.4 (Samsonov, 1976)

e o =10 for thin film (ref 2)

Band Structure: for thin films, band gap=1.8 eV (ref 3)

References:

1. Phys. Rev. B16, 1717 (1977)

2. A J Davenport, L J Oblonsky, M P Ryan and M F Toney, J. Electrochem. Soc. 147, 2162 (2000)

3. I Díez-Pérez, P Gorostiza and F Sanz, J. Electrochem. Soc. 150, B348 (2003)

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Updated 17 June 2003, A H Harker, University College London, UK