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2024
2023
Fotopoulos, V., Mora-Fonz, D., Kleinbichler, M., Bodlos, R., Kozeschnik, E., Romaner, L., Shluger, A.L., 2023. Structure and Migration Mechanisms of Small Vacancy Clusters in Cu: A Combined EAM and DFT Study. Nanomaterials, 13(9), p.1464.
2022
Berens, J., Mistry, M.V., Waldhör, D., Shluger, A., Pobegen, G. and Grasser, T., 2022. Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs. Microelectronics Reliability, 139, p.114789.
Kiyohara, S., Mora-Fonz, D., Shluger, A., Kumagai, Y. and Oba, F., 2022. Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics. The Journal of Physical Chemistry C.
Tov, I.S., Mukherjee, A., Hayon, J., Hargreaves, L., Shluger, A. and Rosenwaks, Y., 2022, August. Hydrogen Induced Dipole Layer in Pd-SiO 2 Based Gas Sensors. In 2022 IEEE Sensors Applications Symposium (SAS) (pp. 1-6). IEEE.
Durrant, T.R., El-Sayed, A.M., Gao, D.Z., Rueckes, T., Bersuker, G. and Shluger, A.L., 2022. Atomistic Modeling of the Electrical Conductivity of Single‐Walled Carbon Nanotube Junctions. physica status solidi (RRL)–Rapid Research Letters, 16(8), p.2200118.
Strand, J., La Torraca, P., Padovani, A., Larcher, L. and Shluger, A.L., 2022. Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation. Journal of Applied Physics, 131(23), p.234501.
Pešić, M., Padovani, A., Rollo, T., Beltrando, B., Strand, J., Agrawal, P., Shluger, A. and Larcher, L., 2022, May. Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. In 2022 IEEE International Memory Workshop (IMW) (pp. 1-4). IEEE.
Farmer, J., Veksler, D., Tang, E., Bersuker, G., Gao, D.Z., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T., Cleveland, L. and Luan, H., 2022, March. Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. P36-1). IEEE.
Bodlos, R., Fotopoulos, V., Spitaler, J., Shluger, A.L. and Romaner, L., 2022. Energies and structures of Cu/Nb and Cu/W interfaces from density functional theory and semi-empirical calculations. Materialia, 21, p.101362.
Kenyon, A.J., Mehonic, A., Ng, W., Zhao, L., Cox, H., Buckwell, M., Patel, K., Knights, A.P., Mannion, D.J. and Shluger, A.L., 2022, June. Defining the performance of SiO x ReRAM by engineering oxide microstructure. In 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) (pp. 1-4). IEEE.
Yuan, S., Kantorovich, L., Shluger, A.L. and Bevan, K.H., 2022. Atomistic insight into the formation dynamics of charged point defects: A classical molecular dynamics study of F+-centers in NaCl. Physical Review Materials, 6(1), p.015404.
2021
Patel, K., Cottom, J., Mehonic, A., Ng, W.H., Kenyon, A.J., Bosman, M. and Shluger, A.L., 2021. The nature of column boundaries in micro-structured silicon oxide nanolayers. APL Materials, 9(12), p.121107.
Mukherjee, A., Gnaim, M., Tov, I.S., Hargreaves, L., Hayon, J., Shluger, A. and Rosenwaks, Y., 2021. Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles. Sensors and Actuators B: Chemical, 346, p.130509.
Wentink, M., Gaberle, J., Aghajanian, M., Mostofi, A.A., Curson, N.J., Lischner, J., Schofield, S.R., Shluger, A.L. and Kenyon, A.J., 2021. Substitutional tin acceptor states in black phosphorus. The Journal of Physical Chemistry C, 125(41), pp.22883-22889.
Nadeem, I.M., Hargreaves, L., Harrison, G.T., Idriss, H., Shluger, A.L. and Thornton, G., 2021. Carboxylate Adsorption on Rutile TiO2 (100): Role of Coulomb Repulsion, Relaxation, and Steric Hindrance. The Journal of Physical Chemistry C.
Izmailov, R.A., Strand, J.W., Larcher, L., O'Sullivan, B.J., Shluger, A.L. and Afanas' ev, V.V., 2021. Electron trapping in ferroelectric HfO 2. Physical Review Materials, 5(3), p.034415.
Farmer, J., Whitehead, W., Hall, A., Veksler, D., Bersuker, G., Gao, D., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T. and Cleveland, L., 2021, March. Mitigating switching variability in carbon nanotube memristors. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-4). IEEE.
Pešić, M., Beltrando, B., Padovani, A., Gangopadhyay, S., Kaliappan, M., Haverty, M., Villena, M.A., Piccinini, E., Bertocchi, M., Chiang, T. and Larcher, L., 2021, March. Variability sources and reliability of 3D—FeFETs. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-7). IEEE.
Mistry, M.V., Cottom, J., Patel, K., Shluger, A.L., Sosso, G.C. and Pobegen, G., 2021. Modelling the interactions and diffusion of NO in amorphous SiO2. Modelling and Simulation in Materials Science and Engineering, 29(3), p.035008.
Hao, X., Yoko, A., Inoue, K., Xu, Y., Saito, M., Chen, C., Seong, G., Tomai, T., Takami, S., Shluger, A.L. and Xu, B., 2021. Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals. Acta Materialia, 203, p.116473.
2020
Ohashi, N., Mora-Fonz, D., Otani, S., Ohgaki, T., Miyakawa, M. and Shluger, A., 2020. Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature. Inorganic Chemistry, 59(24), pp.18305-18313.
Wing, D., Strand, J., Durrant, T., Shluger, A.L. and Kronik, L., 2020. Role of long-range exact exchange in polaron charge transition levels: The case of MgO. Physical Review Materials, 4(8), p.083808.
Mora-Fonz, D., Kaviani, M. and Shluger, A.L., 2020. Disorder-induced electron and hole trapping in amorphous TiO 2. Physical Review B, 102(5), p.054205.
Strand, J.W., Cottom, J., Larcher, L. and Shluger, A.L., 2020. Effect of electric field on defect generation and migration in HfO 2. Physical Review B, 102(1), p.014106.
Van Der Giessen, E., Schultz, P.A., Bertin, N., Bulatov, V.V., Cai, W., Csányi, G., Foiles, S.M., Geers, M.G., González, C., Hütter, M. and Kim, W.K., 2020. Roadmap on multiscale materials modeling. Modelling and Simulation in Materials Science and Engineering, 28(4), p.043001.
Mora-Fonz, D., Schön, J.C., Prehl, J., Woodley, S.M., Catlow, C.R.A., Shluger, A.L. and Sokol, A.A., 2020. Real and virtual polymorphism of titanium selenide with robust interatomic potentials. Journal of Materials Chemistry A, 8(28), pp.14054-14061.
Shluger, A., 2020. Defects in oxides in electronic devices. Handbook of Materials Modeling: Applications: Current and Emerging Materials, pp.1013-1034.
Mora‐Fonz, D. and Shluger, A.L., 2020. Modeling of intrinsic electron and hole trapping in crystalline and amorphous ZnO. Advanced Electronic Materials, 6(1), p.1900760.