Condensed Matter & Materials Physics


Recent Publications




Fotopoulos, V., O’Hern, C.S., Shattuck, M.D. and Shluger, A.L., 2024. Modeling the Effects of Varying the Ti Concentration on the Mechanical Properties of Cu–Ti Alloys. ACS Omega.

Fotopoulos, V., Strand, J., Petersmann, M. and Shluger, A.L., 2024, February. First principles study on the segregation of metallic solutes and non-metallic impurities in Cu grain boundary. In TMS Annual Meeting & Exhibition (pp. 989-999). Cham: Springer Nature Switzerland.

Fotopoulos, V. and Shluger, A.L., 2024. Simulation of mechanical effects of hydrogen in bicrystalline Cu using DFT and bond order potentials. Procedia Structural Integrity, 5, 356-365.


Strand, J. and Shluger, A.L., 2023. On the Structure of Oxygen Deficient Amorphous Oxide Films. Advanced Science, p.2306243.

La Torraca, P., Padovani, A., Strand, J., Shluger, A.L. and Larcher, L., 2023. The Role of Carrier Injection in the Breakdown Mechanism of Amorphous Al 2 O 3 Layers. IEEE Electron Device Letters.

Bersuker, G., Farmer, J., Veksler, D., El-Sayed, A.M., Durrant, T., Gao, D.Z. and Shluger, A.L., 2023, October. Materials-to-applications evaluation framework: assessing memristor technologies for neural network implementations. In 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC) (pp. 1-5). IEEE.

Smith, N., Weger, M., Pobegen, G. and Shluger, A.L., 2023, July. P-Type Impurities in 4H-SiC Calculated Using Density Functional Theory. In Defect and Diffusion Forum (Vol. 426, pp. 35-42). Trans Tech Publications Ltd.

Fotopoulos, V., Mora-Fonz, D., Kleinbichler, M., Bodlos, R., Kozeschnik, E., Romaner, L., Shluger, A.L., 2023. Structure and Migration Mechanisms of Small Vacancy Clusters in Cu: A Combined EAM and DFT Study. Nanomaterials13(9), p.1464.

Kieczka, D., Durrant, T., Milton, K., Goh, K.E.J., Bosman, M. and Shluger, A.L., 2023. Defects in WS2 monolayer calculated with a nonlocal functional: any difference from GGA?. Electronic Structure5(2), p.024001.

Milton K.L., Durrant T.R., Cobos Freire T., Shluger A.L., 2023. Difference in Structure and Electronic Properties of Oxygen Vacancies in α-Quartz and α-Cristobalite Phases of SiO2. Materials, 16(4):1382.

Fotopoulos, V., Grau-Crespo, R., Shluger, A.L., 2023. Thermodynamic analysis of the interaction between metal vacancies and hydrogen in bulk Cu. Physical Chemistry Chemical Physics. 25, 9168-9175.

Fotopoulos, V., O’Hern C.S., Shluger A.L., 2023. Molecular Dynamics Simulations of the Thermal Evolution of Voids in Cu Bulk and Grain Boundaries. In TMS 2023 152nd Annual Meeting & Exhibition Supplemental Proceedings, (pp. 1001-1010). Cham: Springer Nature Switzerland.


Berens, J., Mistry, M.V., Waldhör, D., Shluger, A., Pobegen, G. and Grasser, T., 2022. Origin of trap assisted tunnelling in ammonia annealed SiC trench MOSFETs. Microelectronics Reliability139, p.114789.

Kiyohara, S., Mora-Fonz, D., Shluger, A., Kumagai, Y. and Oba, F., 2022. Unique Atomic and Electronic Structures of Oxygen Vacancies in Amorphous SnO2 from First Principles and Informatics. The Journal of Physical Chemistry C.

Tov, I.S., Mukherjee, A., Hayon, J., Hargreaves, L., Shluger, A. and Rosenwaks, Y., 2022, August. Hydrogen Induced Dipole Layer in Pd-SiO 2 Based Gas Sensors. In 2022 IEEE Sensors Applications Symposium (SAS) (pp. 1-6). IEEE.

Durrant, T.R., El-Sayed, A.M., Gao, D.Z., Rueckes, T., Bersuker, G. and Shluger, A.L., 2022. Atomistic Modeling of the Electrical Conductivity of Single‐Walled Carbon Nanotube Junctions. physica status solidi (RRL)–Rapid Research Letters16(8), p.2200118.

Strand, J., La Torraca, P., Padovani, A., Larcher, L. and Shluger, A.L., 2022. Dielectric breakdown in HfO2 dielectrics: Using multiscale modeling to identify the critical physical processes involved in oxide degradation. Journal of Applied Physics131(23), p.234501.

Pešić, M., Padovani, A., Rollo, T., Beltrando, B., Strand, J., Agrawal, P., Shluger, A. and Larcher, L., 2022, May. Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. In 2022 IEEE International Memory Workshop (IMW) (pp. 1-4). IEEE.

Farmer, J., Veksler, D., Tang, E., Bersuker, G., Gao, D.Z., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T., Cleveland, L. and Luan, H., 2022, March. Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. In 2022 IEEE International Reliability Physics Symposium (IRPS) (pp. P36-1). IEEE.

Bodlos, R., Fotopoulos, V., Spitaler, J., Shluger, A.L. and Romaner, L., 2022. Energies and structures of Cu/Nb and Cu/W interfaces from density functional theory and semi-empirical calculations. Materialia21, p.101362.

Kenyon, A.J., Mehonic, A., Ng, W., Zhao, L., Cox, H., Buckwell, M., Patel, K., Knights, A.P., Mannion, D.J. and Shluger, A.L., 2022, June. Defining the performance of SiO x ReRAM by engineering oxide microstructure. In 2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST) (pp. 1-4). IEEE.

Yuan, S., Kantorovich, L., Shluger, A.L. and Bevan, K.H., 2022. Atomistic insight into the formation dynamics of charged point defects: A classical molecular dynamics study of F+-centers in NaCl. Physical Review Materials6(1), p.015404.


Patel, K., Cottom, J., Mehonic, A., Ng, W.H., Kenyon, A.J., Bosman, M. and Shluger, A.L., 2021. The nature of column boundaries in micro-structured silicon oxide nanolayers. APL Materials9(12), p.121107.

Mukherjee, A., Gnaim, M., Tov, I.S., Hargreaves, L., Hayon, J., Shluger, A. and Rosenwaks, Y., 2021. Ultrasensitive hydrogen detection by electrostatically formed silicon nanowire decorated by palladium nanoparticles. Sensors and Actuators B: Chemical346, p.130509.

Wentink, M., Gaberle, J., Aghajanian, M., Mostofi, A.A., Curson, N.J., Lischner, J., Schofield, S.R., Shluger, A.L. and Kenyon, A.J., 2021. Substitutional tin acceptor states in black phosphorus. The Journal of Physical Chemistry C125(41), pp.22883-22889.

Nadeem, I.M., Hargreaves, L., Harrison, G.T., Idriss, H., Shluger, A.L. and Thornton, G., 2021. Carboxylate Adsorption on Rutile TiO2 (100): Role of Coulomb Repulsion, Relaxation, and Steric Hindrance. The Journal of Physical Chemistry C.

Izmailov, R.A., Strand, J.W., Larcher, L., O'Sullivan, B.J., Shluger, A.L. and Afanas' ev, V.V., 2021. Electron trapping in ferroelectric HfO 2. Physical Review Materials5(3), p.034415.

Farmer, J., Whitehead, W., Hall, A., Veksler, D., Bersuker, G., Gao, D., El-Sayed, A.M., Durrant, T., Shluger, A., Rueckes, T. and Cleveland, L., 2021, March. Mitigating switching variability in carbon nanotube memristors. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-4). IEEE.

Pešić, M., Beltrando, B., Padovani, A., Gangopadhyay, S., Kaliappan, M., Haverty, M., Villena, M.A., Piccinini, E., Bertocchi, M., Chiang, T. and Larcher, L., 2021, March. Variability sources and reliability of 3D—FeFETs. In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-7). IEEE.

Mistry, M.V., Cottom, J., Patel, K., Shluger, A.L., Sosso, G.C. and Pobegen, G., 2021. Modelling the interactions and diffusion of NO in amorphous SiO2. Modelling and Simulation in Materials Science and Engineering29(3), p.035008.

Hao, X., Yoko, A., Inoue, K., Xu, Y., Saito, M., Chen, C., Seong, G., Tomai, T., Takami, S., Shluger, A.L. and Xu, B., 2021. Atomistic origin of high-concentration Ce3+ in {100}-faceted Cr-substituted CeO2 nanocrystals. Acta Materialia203, p.116473.


Ohashi, N., Mora-Fonz, D., Otani, S., Ohgaki, T., Miyakawa, M. and Shluger, A., 2020. Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature. Inorganic Chemistry59(24), pp.18305-18313.

Wing, D., Strand, J., Durrant, T., Shluger, A.L. and Kronik, L., 2020. Role of long-range exact exchange in polaron charge transition levels: The case of MgO. Physical Review Materials4(8), p.083808.

Mora-Fonz, D., Kaviani, M. and Shluger, A.L., 2020. Disorder-induced electron and hole trapping in amorphous TiO 2. Physical Review B102(5), p.054205.

Strand, J.W., Cottom, J., Larcher, L. and Shluger, A.L., 2020. Effect of electric field on defect generation and migration in HfO 2. Physical Review B102(1), p.014106.

Van Der Giessen, E., Schultz, P.A., Bertin, N., Bulatov, V.V., Cai, W., Csányi, G., Foiles, S.M., Geers, M.G., González, C., Hütter, M. and Kim, W.K., 2020. Roadmap on multiscale materials modeling. Modelling and Simulation in Materials Science and Engineering28(4), p.043001.

Mora-Fonz, D., Schön, J.C., Prehl, J., Woodley, S.M., Catlow, C.R.A., Shluger, A.L. and Sokol, A.A., 2020. Real and virtual polymorphism of titanium selenide with robust interatomic potentials. Journal of Materials Chemistry A8(28), pp.14054-14061.

Shluger, A., 2020. Defects in oxides in electronic devices. Handbook of Materials Modeling: Applications: Current and Emerging Materials, pp.1013-1034.

Mora‐Fonz, D. and Shluger, A.L., 2020. Modeling of intrinsic electron and hole trapping in crystalline and amorphous ZnO. Advanced Electronic Materials6(1), p.1900760.