Recent publications

Linear hyperfine tuning of donor spins in silicon using hydrostatic strain A Bienfait et al. Phys Rev Lett 120 167701 (2018)

Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit S Schaal et al. Phys Rev App Highlight, 9 054016 (2018)

Coherent spin dynamics of ytterbium ions in yttrium orthosilicate A Bienfait et al. Phys Rev B Highlight, 97 064409 (2018)

Magnetic resonance with squeezed microwaves A Bienfait et al. Phys Rev X 7 041011 (2017)

Controlling spin relaxation with a cavity A Bienfait et al. Nature 531 74 (2016)

Nuclear spin decoherence of neutral 31P donors in silicon: Effect of 29Si nuclei ES Petersen et al. Phys Rev B 93 161202(R) (2016)

Reaching the quantum limit of sensitivity in electron spin resonance A Bienfait et al. Nature Nanotechnology 11 253 (2015)

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon M Urdampilleta et al. Phys Rev X 5 031024 (2015)

Coherent storage of microwave excitations in rare-earth nuclear spins G Wolfowicz et al. Phys Rev Lett 114 170503 (2015)

Hybrid optical-electrical detection of donor electron spins with bound excitons in Si CC Lo et al. Nature Materials 14 490 (2015)

Conditional Control of Donor Nuclear Spins in Silicon Using Stark Shifts G Wolfowicz et al. Phys Rev Lett 113 157601 (2014)

>> complete list

Electrically detected magnetic resonance

Recombination centres in Czochralski silicon containing oxide precipitates


Electrically detected magnetic resonance (EDMR) is a very sensitive technique, which can be used for the spectroscopic characterisation of photovoltaic materials on the nanoscale. We have studied the most important recombination centres in Czochralski silicon (Cz-Si) containing strained oxide precipitates (OPs) with a wide range of densities. Cz-Si is used for the vast majority of silicon integrated circuits and ~40% of solar cells, and is known to suffer from various impurities. Strained OPs reveal a square platelet-like shape and are used to confine detrimental impurities to inactive regions of the wafer in a process called internal gettering. The recombination centres associated with intentionally grown OPs as well as with iron-related impurities, such as interstitial iron and the iron-boron pair, are identified via EDMR and discussed. Our results demonstrate that OPs are associated with Pb0 and Pb1 dangling bonds forming at the corners of those platelets.

Spin-dependent recombination in Czochralski silicon containing oxide precipitates

V. Lang, J. D. Murphy, R. J. Falster, and J. J. L. Morton
J Appl Phys 111 013710 (2012) Link

Electrically Detected Magnetic Resonance at High Magnetic Fields 


We have investigated the EDMR effect in silicon field-effect transistors (FETs) and demonstrate the readout of arsenic and phosphorus donor spins in a resonant microwave cavity at 3.36 T and 94 GHz (W-band) for the first time worldwide. A comparison between conventional low- and high-field EDMR on the same devices shows that bolometric heating as well as spin-dependent scattering can be ruled out as the underlying mechanism giving rise to the spin resonance signals in FETs. Our signals are rather understood in terms of a polarisation transfer from the donor to the two-dimensional electron gas forming in the device channel.

Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas

CC Lo, V Lang, RE George, JJL Morton, AM Tyryshkin, SA Lyon, J Bokor, T Schenkel
Phys Rev Lett 106 207601 (2011) Link

Electrically detected magnetic resonance in a W-band microwave cavity

V Lang, CC Lo, RE George, SA Lyon, J Bokor, T Schenkel, A Ardavan and JJL Morton
Rev Sci Instrum 82 034704 (2011) Link

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