15th September - Invited talk - Prof. Huiming Cheng.

13 September 2017

Invited Talk

We are delighted to have Prof. Huiming Cheng to give us an invited talk on “Growth of High-Quality Graphene and Other 2D Materials By CVD” in our department. The talk will be delivered at 3pm on 15th Sept. in Chemistry Lecture Theatre, followed by a reception in the Nyholm Room. The abstract and a short bio are attached.

Please note that the seminar is in the Chemistry Lecture Theatre 3pm 15th September.

Growth of High-Quality Graphene and Other 2D Materials By CVD

Hui-Ming Cheng Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China

Graphene materials have unique and excellent properties, and they are expected to be used in many fields. Therefore, fabrication of high-quality graphene is very important. Like graphene, other high-quality two-dimensional (2D) materials are essentially important for investigating new physics and properties in the 2D limit, and for many fascinating applications, in particular, electronic and optoelectronic applications. CVD is a powerful method to grow high-quality grains and films of graphene and other 2D materials such as transition metal sulfides and carbides on metal substrates. For example, millimeter-size and extremely small-size single crystal graphene domains and films on Pt and Cu substrates, large-size single-crystal monolayer WS2 domains on Au substrates, and ultrathin carbide crystals on specifically-designed metal substrates can be grown by ambient-pressure CVD. Three-dimensional graphene interconnected framework can also be synthesized by CVD. These CVD-grown high-quality graphene and other 2D crystals have interesting physical properties and applications, such as transparent conducting films, electronic and optoelectronic devices, and superconductivity.


1.Ren W. C. & Cheng H. M., Nature Nano. 2014, 9, 726-730.

2.Gao L. B., et al, Nature Commun. 2012, 3, 699.

3.Ma T., et al, PNAS 2013, 110 (51), 20386-2039.

4.Gao L. B., et al, APL 2010, 97 (18), 183109.

5.Chen Z. P., et al, Nature Mater 2011, 10 (6), 424-428.

6.Gao Y., et al, Nature Commun. 2015, 6, 8569.

7.Gao Y., et al, Adv. Mater. 2017, in press.

8.Xu C., et al, Nature Materials 2015, 14 (11), 1135-1141.

9.Zhang Z. K., et al, Nature Commun. 2017, 8:14560, DOI:10.1038/ncomms14560.

10.Ma T., et al, Nature Commun. 2017, 8:14486, DOI: 10.1038/ncomms14486.

Short Bio

Dr. Hui-Ming Cheng is Professor and Director of both Advanced Carbon Research Division of Shenyang National Laboratory for Materials Science, Institute of Metal Research, the Chinese Academy of Sciences, and the Low-Dimensional Material and Device Laboratory of the Tsinghua-Berkeley Shenzhen Institute, Tsinghua University. His research activities focus on carbon nanotubes, graphene, other low-dimensional materials, energy storage materials, photocatalytic semiconducting materials, and bulk carbon materials. He has published over 550 papers with >52,000 citations and is recognized as a Highly Cited Researcher in both materials science and chemistry fields by Thomson Reuters. He used to be the Editor of Carbon and Editor-in-Chief of New Carbon Materials, and is now the founding Editor-in-Chief of Energy Storage Materials and Associate Editor of Science China Materials. He was elected as a member of Chinese Academy of Sciences and a fellow of TWAS.