UCL Chemistry

This paper describes the use of combinatorial aerosol-assisted chemical vapour deposition (cAACVD) to deposit gallium-doped indium oxide thin films. The oxide films, Ga_xIn_2-xO₃, were deposited within composition graduated films from the aerosol-assisted CVD of GaMe₃, InMe₃ and HOCH₂CH₂OMe. Amorphous Ga₂O₃ was deposited closest to the inlet from the bubbler containing GaMe₃/HOCH₂CH₂OMe whereas crystalline In₂O₃ was grown on the substrate closest to the inlet from the bubbler containing InMe₃/HOCH₂CH₂OMe. A range of gallium-indium-oxide compositions, Ga_xIn_2-xO₃, were deposited on the substrate in the region between the two inlets. This allowed for a systematic investigation on the effect of doping on gallium and indium oxide and a direct relationship between composition and conductivity of the films was observed. This new technique combines the advantages of AACVD (volatility/thermal stability restrictions are removed) with those of cAPCVD/cLPCVD (rapid deposition/analysis of a compositional gradient). By utilizing a liquid-gas aerosol, as is employed in combinatorial AACVD, the restrictions of volatility and thermal stability are lifted and so new precursors and materials can be investigated.

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